English
简体中文
CRYSTAL 22.1184MHZ 4PF SMD
HEXFET N-CHANNEL , 25V, 19A
CONN RCPT MALE 1P SILV SLDR CUP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5.2mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.667 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.8W (Ta), 34W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-PQFN (3.3x3.3), Power33 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPS075N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 50A TO251-3 |
|
AOW11S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262 |
|
2SK327700LPanasonic |
MOSFET N-CH 200V 2.5A U-G1 |
|
DMT6005LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHA 60V 17.9A POWERDI |
|
PMN70XPXNexperia |
MOSFET P-CH 20V 3.1A 6TSOP |
|
IPB50R199CPRochester Electronics |
MOSFET N-CH 500V 17A TO263-3-2 |
|
STB20NM60T4STMicroelectronics |
MOSFET N-CH 600V 20A D2PAK |
|
BUK963R2-40B,118Rochester Electronics |
MOSFET N-CH 40V 100A D2PAK |
|
DMTH4005SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 20.9A PWRDI5060 |
|
STP80NF10FPSTMicroelectronics |
MOSFET N-CH 100V 38A TO220FP |
|
IRFSL4410ZPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 97A TO262 |
|
TK100E06N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 60V 100A TO-220 |
|
SI7450DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 3.2A PPAK SO-8 |