类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMV50ENEARNexperia |
MOSFET N-CH 30V 3.9A TO236AB |
|
BUK7Y28-75B,115Nexperia |
MOSFET N-CH 75V 35.5A LFPAK56 |
|
IXTR170P10PWickmann / Littelfuse |
MOSFET P-CH 100V 108A ISOPLUS247 |
|
ISL9N315AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM2N100CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 1000V 1.85A TO251 |
|
AOTF11S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO220-3F |
|
IPP65R099C6XKSA1Rochester Electronics |
MOSFET N-CH 650V 38A TO220-3 |
|
RM4N650IPRectron USA |
MOSFET N-CHANNEL 650V 4A TO251 |
|
DMG1013UWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 820MA SOT323 |
|
FDP6035LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFBE30STRLPBFVishay / Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
|
PSMN6R3-120ESQNexperia |
MOSFET N-CH 120V 70A I2PAK |
|
IPD30N12S3L31ATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL_100+ |