English
简体中文
RES 22 OHM 5W 5% CERAMIC WW
MOSFET N-CH 55V 42A DPAK
DIN-SIGNAL C033FPW-17 3C1-2
CONN BARRIER STRIP 7CIRC 0.375"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 13.5mOhm @ 36A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1.57 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF620STRLPBFVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
IRF7326D2TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 3.6A 8SO |
|
DMN25D0UFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 25V 240MA 3DFN |
|
DMN60H080DS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 80MA SOT23-3 |
|
BUK7Y21-40ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQD90P04-9M4L_GE3Vishay / Siliconix |
MOSFET P-CH 40V 90A TO252AA |
|
BSP126/S911115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSC026N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 23A/100A TDSON |
|
SQM60N06-15_GE3Vishay / Siliconix |
MOSFET N-CH 60V 56A TO263 |
|
RFP8P10Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
DMP2305UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A SOT23-3 |
|
2SK3557-6-TB-EXRochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
IXFP7N80PMWickmann / Littelfuse |
MOSFET N-CH 800V 3.5A TO220AB |