English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 16.5mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA (Min) |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.56W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSP318SL6327HTSA1Rochester Electronics |
MOSFET N-CH 60V 2.6A SOT223-4 |
|
HUF76145S3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS4H013NFT1GRochester Electronics |
MOSFET N-CH 25V 43A/269A 5DFN |
|
IRFSL9N60APBFVishay / Siliconix |
MOSFET N-CH 600V 9.2A I2PAK |
|
TN0106N3-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 60V 350MA TO92-3 |
|
SFR9220TMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
STP160N3LLSTMicroelectronics |
MOSFET N-CH 30V 120A TO220 |
|
APT34M60BRoving Networks / Microchip Technology |
MOSFET N-CH 600V 36A TO247 |
|
IXFQ20N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 20A TO3P |
|
IRFI840GLCPBFVishay / Siliconix |
MOSFET N-CH 500V 4.5A TO220-3 |
|
SFR9024TMRochester Electronics |
MOSFET P-CH 60V 7.8A DPAK |
|
PMH1200UPEHNexperia |
MOSFET P-CH 30V 520MA DFN0606-3 |
|
IPD50R520CPATMA1IR (Infineon Technologies) |
LOW POWER_LEGACY |
