类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 90A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 7mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 75µA |
栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4000 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 114W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TDSON-8-1 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVTFS5C658NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 109A 8WDFN |
|
DMN3730UFB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 750MA 3DFN |
|
SIHU3N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 3A TO251 |
|
TSM60NB041PW C1GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 78A TO247 |
|
NTBG020N120SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 1200V 8.6A/98A D2PAK |
|
NDF04N60ZHRochester Electronics |
MOSFET N-CH 600V 4.8A TO220FP |
|
MMSF7P03HDR2GRochester Electronics |
MOSFET P-CH 30V 7A 8SOIC |
|
FQP3N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3A TO220-3 |
|
R6015ENJTLROHM Semiconductor |
MOSFET N-CH 600V 15A LPTS |
|
STB75NF20STMicroelectronics |
MOSFET N-CH 200V 75A D2PAK |
|
RQ5E030RPTLROHM Semiconductor |
MOSFET P-CH 30V 3A TSMT3 |
|
EPC8010EPC |
GANFET N-CH 100V 2.7A DIE |
|
FQI9N50TURochester Electronics |
MOSFET N-CH 500V 9A I2PAK |