English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DeepGATE™, STripFET™ VI |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5.5V, 10V |
| rds on (max) @ id, vgs: | 4.2mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 70W (Tc) |
| 工作温度: | 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVTFS5C673NLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 13A/50A 8WDFN |
|
BSZ096N10LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 40A TSDSON |
|
AOB254LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 4.2A/32A TO263 |
|
STW20N65M5STMicroelectronics |
MOSFET N-CH 650V 18A TO247 |
|
AOWF095A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 38A TO262F |
|
SI7848BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 47A PPAK SO-8 |
|
IRF720LPBFVishay / Siliconix |
MOSFET N-CH 400V 3.3A TO262-3 |
|
SI7738DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 30A PPAK SO-8 |
|
HUF75344S3STRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
TSM80N950CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 800V 6A TO252 |
|
IXTU8N70X2Wickmann / Littelfuse |
MOSFET N-CH 700V 8A TO251-3 |
|
IRFZ20PBFVishay / Siliconix |
MOSFET N-CH 50V 15A TO220AB |
|
IRF9393TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 9.2A 8SO |
