类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 23A (Ta), 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 2.8mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 2.8V @ 50µA |
栅极电荷 (qg) (max) @ vgs: | 37 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2700 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 83W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TDSON-8-7 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB65R660CFDATMA1Rochester Electronics |
MOSFET N-CH 650V 6A D2PAK |
|
APT50M75JLLU2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 51A SOT227 |
|
SI7114DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11.7A PPAK1212-8 |
|
IPT059N15N3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 155A 8HSOF |
|
TN0104N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 40V 450MA TO92-3 |
|
FDMS86322Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 13A/60A 8PQFN |
|
RFD3055LESM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11A TO252AA |
|
IPP120P04P4L03AKSA1IR (Infineon Technologies) |
MOSFET P-CH 40V 120A TO220-3 |
|
DMN3052LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 7.1A 8SOP |
|
IPP083N10N5AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 73A TO220-3 |
|
IRLR3105TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 25A DPAK |
|
AOB296LAlpha and Omega Semiconductor, Inc. |
MOSFET N CH 100V 9.5A TO263 |
|
PSMN7R8-120PSQRochester Electronics |
MOSFET N-CH 120V 70A I2PAK |