FIXED IND 5.6MH 66MA 54.7 OHM
CRYSTAL 13.5600MHZ 10PF SMD
MOSFET P-CH 12V 2A TSMT3
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 105mOhm @ 2A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 6.5 nC @ 4.5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 770 pF @ 6 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TSMT3 |
包/箱: | SC-96 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMS0310SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
FQI10N20CTURochester Electronics |
MOSFET N-CH 200V 9.5A I2PAK |
|
BUK6240-75C,118Rochester Electronics |
MOSFET N-CH 75V 22A DPAK |
|
SSM3J36TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 330MA UFM |
|
IRFH8303TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 43A/100A 8PQFN |
|
IPD60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD2670Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.6A TO252 |
|
ZXMP10A17GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 2.4A SOT223 |
|
IPB180N04S4LH0ATMA1Rochester Electronics |
MOSFET N-CH 40V 180A TO263-7-3 |
|
RSR020P05FRATLROHM Semiconductor |
MOSFET P-CH 45V 2A TSMT3 |
|
APT56M60B2Roving Networks / Microchip Technology |
MOSFET N-CH 600V 60A TO247 |
|
IRFZ48NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 64A TO220AB |
|
CSD18511Q5ATTexas Instruments |
MOSFET N-CH 40V 159A 8VSON |