类型 | 描述 |
---|---|
系列: | SIPMOS® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 5.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 600mOhm @ 4.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 530 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 40W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
C3M0032120J1Wolfspeed - a Cree company |
1200V 32MOHM SIC MOSFET |
|
DMTH10H010LCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 108A TO220AB |
|
IRF6215STRLPBFIR (Infineon Technologies) |
MOSFET P-CH 150V 13A D2PAK |
|
SPW11N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFI4229PBFIR (Infineon Technologies) |
MOSFET N-CH 250V 19A TO220AB |
|
NVMFS5C673NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |
|
NDTL01N60ZT1GRochester Electronics |
MOSFET N-CH 600V 250MA SOT223 |
|
BUK9M12-60EXNexperia |
MOSFET N-CH 60V 54A LFPAK33 |
|
AUIRLR2703Rochester Electronics |
MOSFET N-CH 30V 20A DPAK |
|
NDBA170N06AT4HRochester Electronics |
MOSFET N-CH 60V 170A D2PAK |
|
FDB2710Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 50A D2PAK |
|
BSC042N03LSGRochester Electronics |
BSC042N03 - 12V-300V N-CHANNEL P |
|
FQT1N80TF-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 200MA SOT223-3 |