类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 10.3A (Ta), 12.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 9.8mOhm @ 10A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 168 nC @ 8 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 5875 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta), 2.2W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-TSSOP |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPP06N03LARochester Electronics |
MOSFET N-CH 25V 50A TO220-3 |
|
2SK3820-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLUS020N03CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5.3A 6UDFN |
|
IRFB3207ZGPBFRochester Electronics |
MOSFET N-CH 75V 120A TO220AB |
|
SIHF540STRL-GE3Vishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
STD3NK50Z-1STMicroelectronics |
MOSFET N-CH 500V 2.3A IPAK |
|
R6035ENZ1C9ROHM Semiconductor |
MOSFET N-CH 600V 35A TO247 |
|
SQJA72EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 37A PPAK SO-8 |
|
SIHG17N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 15A TO247AC |
|
IXFP30N25X3Wickmann / Littelfuse |
MOSFET N-CHANNEL 250V 30A TO220 |
|
AOB288LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 10.5A/46A TO263 |
|
IPL65R650C6SATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6.7A THIN-PAK |
|
IPB60R145CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO263-3-2 |