MOSFET P-CH 30V 13.5A/40A TSDSON
2-CELL 2A BOOST CHARGER WITH NVD
类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 13.5A (Ta), 40A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 8.6mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 3.1V @ 105µA |
栅极电荷 (qg) (max) @ vgs: | 57.5 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 4785 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2.1W (Ta), 69W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TSDSON-8 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDC8601Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 2.7A SUPERSOT6 |
|
STU7N60M2STMicroelectronics |
MOSFET N-CH 600V 5A IPAK |
|
BSZ120P03NS3EGATMA1Rochester Electronics |
MOSFET P-CH 30V 11A/40A TSDSON-8 |
|
DMN3009SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 16A PWRDI3333 |
|
PMV65XPERNexperia |
MOSFET P-CH 20V 2.8A TO236AB |
|
STF20N65M5STMicroelectronics |
MOSFET N-CH 650V 18A TO220FP |
|
BSZ0704LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 11A/40A TSDSON |
|
MCU60P06-TPMicro Commercial Components (MCC) |
MOSFET P-CH 60V 60A DPAK |
|
AUIRFS8409-7PIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
RJU002N06T106ROHM Semiconductor |
MOSFET N-CH 60V 200MA UMT3 |
|
STP11NM60FDSTMicroelectronics |
MOSFET N-CH 600V 11A TO220AB |
|
DMP2035UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 8.1A 6UDFN |
|
UJ3C065030B3UnitedSiC |
MOSFET N-CH 650V 65A TO263 |