English
简体中文
CRYSTAL 12.0000MHZ 16PF SMD
MOSFET N-CH 30V 12A 8SO
COM SCHOTTKY CHIP
MODULE ASSORTMENT MIDDLE 207 PCS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 20mOhm @ 8.3A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 490 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.4W (Ta), 5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLR120ATFRochester Electronics |
MOSFET N-CH 100V 8.4A DPAK |
|
STH180N10F3-2STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
|
SIR570DP-T1-RE3Vishay / Siliconix |
N-CHANNEL 150 V (D-S) MOSFET POW |
|
STL30P3LLH6STMicroelectronics |
MOSFET P-CH 30V 30A POWERFLAT |
|
DMG4800LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 7.44A 8DFN |
|
SISS22LDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 25.5A/92.5A PPAK |
|
HUFA76437S3STRochester Electronics |
MOSFET N-CH 60V 71A D2PAK |
|
PHB45NQ10T,118Nexperia |
MOSFET N-CH 100V 47A D2PAK |
|
IXTA2R4N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 2.4A TO263 |
|
FDS6690ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A 8SOIC |
|
IPD70N12S311ATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 70A TO252-31 |
|
IRFH8334TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A/44A PQFN |
|
IXFH52N50P2Wickmann / Littelfuse |
MOSFET N-CH 500V 52A TO247AD |