English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 8mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 23.4 nC @ 8 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 995 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 700mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | U-DFN2020-6 (Type F) |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN3900UFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 550MA 3DFN |
|
IRFH5025TRPBFIR (Infineon Technologies) |
MOSFET N-CH 250V 3.8A 8PQFN |
|
BSC0702LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A SUPERSO8 |
|
SIHFR9024TR-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
|
TJ80S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 80A DPAK |
|
ES6U42T2RROHM Semiconductor |
MOSFET P-CH 20V 1A 6WEMT |
|
IRFS52N15DTRLPIR (Infineon Technologies) |
MOSFET N-CH 150V 51A D2PAK |
|
RT1E050RPTRROHM Semiconductor |
MOSFET P-CH 30V 5A 8TSST |
|
RQ5L015SPTLROHM Semiconductor |
MOSFET P-CH 60V 1.5A TSMT3 |
|
IRF5305STRRPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 31A D2PAK |
|
STD155N3LH6STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
FQP9N50Rochester Electronics |
MOSFET N-CH 500V 9A TO220-3 |
|
RUF025N02TLROHM Semiconductor |
MOSFET N-CH 20V 2.5A TUMT3 |
