类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STU9N60M2STMicroelectronics |
MOSFET N-CH 600V 5.5A IPAK |
|
IPA60R380C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO220-FP |
|
DMP58D0LFB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 50V 180MA 3DFN |
|
AOW2500Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 11.5/152A TO262 |
|
AOB256LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 3A/19A TO263 |
|
SSM6J402TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 2A UF6 |
|
IPA65R380E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.6A TO220-FP |
|
NDF06N60ZGRochester Electronics |
MOSFET N-CH 600V 7.1A TO220FP |
|
EPC2215EPC |
GAN TRANS 200V 8MOHM BUMPED DIE |
|
BUK7Y153-100E115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP041N04NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
|
NP36P06SLG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 36A TO252 |
|
SI7615BDN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 29A/104A PPAK |