English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 37mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 710 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 57W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-PAK (TO-252AA) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4927NCT1GRochester Electronics |
MOSFET N-CH 30V 7.9A/38A 5DFN |
|
APT10045JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 21A ISOTOP |
|
NVMFS5C426NWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/235A 5DFN |
|
SSM3K44FS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA SSM |
|
SPU18P06PRochester Electronics |
MOSFET P-CH 60V 18.6A TO251-3 |
|
IRFR9020TRPBFVishay / Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
|
IPP60R450E6XKSA1Rochester Electronics |
MOSFET N-CH 600V 9.2A TO220-3 |
|
BUK964R2-80E,118Nexperia |
MOSFET N-CH 80V 120A D2PAK |
|
IRFS7734PBFRochester Electronics |
MOSFET N-CH 75V 183A D2PAK |
|
IRF7842PBFRochester Electronics |
MOSFET N-CH 40V 18A 8SO |
|
DMN10H100SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 18A TO252 |
|
STF8NM50NSTMicroelectronics |
MOSFET N-CH 500V 5A TO220FP |
|
IXFH94N30TWickmann / Littelfuse |
MOSFET N-CH 300V 94A TO247AD |
