English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ M2 |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 320mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 700 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | IPAK (TO-251) |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RZY200P01TLROHM Semiconductor |
MOSFET P-CH 12V 20A TCPT3 |
|
2SK3003Sanken Electric Co., Ltd. |
MOSFET N-CH 200V 18A TO220F |
|
FQB55N06TMRochester Electronics |
MOSFET N-CH 60V 55A D2PAK |
|
PSMN3R4-30PL,127Nexperia |
MOSFET N-CH 30V 100A TO220AB |
|
CEDM7004 TR PBFREECentral Semiconductor |
MOSFET N-CH 30V 1.78A SOT883 |
|
BUK6507-55C,127Rochester Electronics |
PFET, 100A I(D), 55V, 0.0105OHM, |
|
IPP80N06S2L06AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3 |
|
SIHB22N60ET5-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263 |
|
SI4434DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 250V 2.1A 8SO |
|
IXFX170N20TWickmann / Littelfuse |
MOSFET N-CH 200V 170A PLUS247-3 |
|
BSS84LT7GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 50V 130MA SOT23-3 |
|
AONS21321Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 14A/24A 8DFN |
|
FDMS86200DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 9.3A DLCOOL56 |
