English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTY1N80PWickmann / Littelfuse |
MOSFET N-CH 800V 1A TO252 |
|
SIRA18ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 30.6A PPAK SO-8 |
|
SIAA40DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 30A PPAK SC70-6 |
|
FDS8880Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.6A 8SOIC |
|
IPI90N06S4L04AKSA2Rochester Electronics |
MOSFET N-CH 60V 90A TO262-3-1 |
|
FCH041N65F-F085Rochester Electronics |
MOSFET N-CH 650V 76A TO247-3 |
|
NTMSD2P102R2SGRochester Electronics |
MOSFET P-CH 20V 2.3A 8-SOIC |
|
DMP2069UFY4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2.5A DFN2015H4-3 |
|
STD86N3LH5STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
CDM4-600LR TR13 PBFREECentral Semiconductor |
MOSFET N-CH 600V 4A DPAK |
|
IPB80N08S406ATMA1Rochester Electronics |
MOSFET N-CH 80V 80A TO263-3-2 |
|
G3R160MT17JGeneSiC Semiconductor |
SIC MOSFET N-CH 22A TO263-7 |
|
BUK7M12-60EXNexperia |
MOSFET N-CH 60V 53A LFPAK33 |
