English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperFET® II |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 23A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 220mOhm @ 11.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 2.3mA |
| 栅极电荷 (qg) (max) @ vgs: | 105 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4.56 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 44W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
XP152A12C0MRTorex Semiconductor Ltd. |
MOSFET P-CH 20V 700MA SOT23 |
|
PSMN1R0-30YLDXNexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
IRFS31N20DTRLPRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
NTD6416AN-1GRochester Electronics |
MOSFET N-CH 100V 17A IPAK |
|
PSMN3R0-30YL,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
IRL620STRLPBFVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
STV200N55F3STMicroelectronics |
MOSFET N-CH 55V 200A 10POWERSO |
|
PSMN2R0-25YLDXNexperia |
MOSFET N-CH 25V 100A LFPAK56 |
|
SPI07N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPH3300CNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 150V 18A 8SOP |
|
PCP1405-TD-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 600MA SOT89 |
|
DMT6004SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO220-3 |
|
NP82N04MUG-S18-AYRochester Electronics |
MOSFET N-CH 40V 82A TO220-3 |
