类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 400 V |
电流 - 连续漏极 (id) @ 25°c: | 86mA (Tj) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 25Ohm @ 100mA, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 125 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 740mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-92-3 |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRFS3207ZTRLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IRFR222Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STB19NF20STMicroelectronics |
MOSFET N-CH 200V 15A D2PAK |
|
IXTY8N70X2Wickmann / Littelfuse |
MOSFET N-CHANNEL 700V 8A TO252 |
|
NTD4302T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.4A/68A DPAK |
|
AONS66612Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 46A/100A 8DFN |
|
BSL373SNH6327XTSA1Rochester Electronics |
MOSFET N-CH 100V 2A TSOP6-6 |
|
IPU80R1K0CEAKMA1Rochester Electronics |
MOSFET N-CH 800V 5.7A TO251-3 |
|
BSL307SPL6327HTSA1Rochester Electronics |
MOSFET P-CH 30V 5.5A TSOP-6 |
|
AOC2421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 8V 2.5A 4ALPHADFN |
|
FDS86240Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 7.5A 8SOIC |
|
TK10A60E,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 10A TO220SIS |
|
MTD20P06HDLRochester Electronics |
P-CHANNEL POWER MOSFET |