类型 | 描述 |
---|---|
系列: | AlphaSGT™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 40A (Ta), 92A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.2mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4350 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 6.2W (Ta), 92W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | UltraSO-8™ |
包/箱: | 3-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTE2931NTE Electronics, Inc. |
MOSFET N-CH 200V 12.8A TO3PML |
|
IPDD60R125G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20A HDSOP-10 |
|
NTMFS5H400NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 46A/330A 5DFN |
|
IPB22N03S4L15ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 22A TO263-3 |
|
BUK7E2R3-40C,127Rochester Electronics |
MOSFET N-CH 40V 100A I2PAK |
|
ISL9N318AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RSR010N10HZGTLROHM Semiconductor |
MOSFET N-CH 100V 1A TSMT3 |
|
IPP65R420CFDXKSA1Rochester Electronics |
MOSFET N-CH 650V 8.7A TO220-3 |
|
BUK6E3R2-55C,127Rochester Electronics |
MOSFET N-CH 55V 120A I2PAK |
|
RRH075P03TB1ROHM Semiconductor |
MOSFET P-CH 30V 7.5A 8SOP |
|
STW9NK90ZSTMicroelectronics |
MOSFET N-CH 900V 8A TO247-3 |
|
IPA50R500CEXKSA2IR (Infineon Technologies) |
MOSFET N-CH 500V 5.4A TO220 |
|
RS3G160ATTB1ROHM Semiconductor |
PCH -40V -16A POWER MOSFET - RS3 |