English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.2A (Ta), 49A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.3mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13.5 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 990 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.27W (Ta), 36.6W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MGSF3455VT1Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRF7946TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 90A DIRECTFET MX |
|
APT1201R2BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 12A TO247 |
|
SI7112DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11.3A PPAK1212-8 |
|
2N7002H6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 60V 300MA SOT23-3 |
|
IPD50R800CEAUMA1IR (Infineon Technologies) |
CONSUMER |
|
PMV50XP215Rochester Electronics |
P-CHANNEL MOSFET |
|
SSM6K504NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 9A 6UDFNB |
|
IRL3705ZLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO262 |
|
IRF8306MTRPBFRochester Electronics |
MOSFET N-CH 30V 23A DIRECTFET |
|
FDD4N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3.4A DPAK |
|
IRF614BFP001Rochester Electronics |
MOSFET N-CH 250V 2.8A TO220F-3 |
|
IRL40B212IR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO220AB |
