English
简体中文
OSC XO 10MHZ 3.3V HCMOS
MOSFET N-CH 800V 2A TO220FP
IC AMP CLASS AB STER 7.5W 12SIL
SYNTHESIZER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH5™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.5Ohm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 3 nC @ 10 V |
| vgs (最大值): | 30V |
| 输入电容 (ciss) (max) @ vds: | 95 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 20W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FP |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK6D81-80EXNexperia |
MOSFET N-CH 80V 3.2A/9.8A 6DFN |
|
CSD17527Q5ATexas Instruments |
MOSFET N-CH 30V 65A 8VSON |
|
IPP120N20NFDAKSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 84A TO220-3 |
|
FQP17P06Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
SI7469DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
|
RM50N60T2Rectron USA |
MOSFET N-CHANNEL 60V 50A TO220-3 |
|
APT10M09LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 100V 100A TO264 |
|
BUK625R2-30C,118Rochester Electronics |
MOSFET N-CH 30V 90A DPAK |
|
AO4459Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 6.5A 8SOIC |
|
IPW65R125C7XKSA1Rochester Electronics |
MOSFET N-CH 650V 18A TO247-3 |
|
RM42P30DNRectron USA |
MOSFET P-CHANNEL 30V 42A 8DFN |
|
TSM60NB600CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 7A TO252 |
|
STFI31N65M5STMicroelectronics |
MOSFET N CH 650V 22A I2PAKFP |