







CRYSTAL 30.0000MHZ 8PF SMD
MEMS OSC XO 10.0000MHZ H/LV-CMOS
MOSFET N-CH 120V 70A TO220AB
MOSFET P-CH 20V 6A TSOT26
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 120 V |
| 电流 - 连续漏极 (id) @ 25°c: | 70A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 6.7mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 207.1 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 11384 pF @ 60 V |
| 场效应管特征: | - |
| 功耗(最大值): | 405W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SI7615ADN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 35A PPAK1212-8 |
|
|
STWA20N95K5STMicroelectronics |
MOSFET N-CH 950V 17.5A TO247 |
|
|
IPP80R900P7Rochester Electronics |
IPP80R900 - 800V COOLMOS N-CHANN |
|
|
STD20NF06T4STMicroelectronics |
MOSFET N-CH 60V 24A DPAK |
|
|
IXTH5N100AWickmann / Littelfuse |
MOSFET N-CH 1000V 5A TO247 |
|
|
IXFH140N10PWickmann / Littelfuse |
MOSFET N-CH 100V 140A TO247AD |
|
|
SQA401EEJ-T1_GE3Vishay / Siliconix |
MOSFET P-CH 20V 2.68A PPAK SC70 |
|
|
FDPF7N60NZTRochester Electronics |
MOSFET N-CH 600V 6.5A TO220F |
|
|
NTMFS4C250NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/69A 5DFN |
|
|
RQ5E025ATTCLROHM Semiconductor |
MOSFET P-CHANNEL 30V 2.5A TSMT3 |
|
|
HUF75329D3SRochester Electronics |
MOSFET N-CH 55V 20A TO252AA |
|
|
IRF840ASPBFVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
|
IRLSL4030PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 180A TO262 |