类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 80A (Tj) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 4.3mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 101.6 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 6124 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 85W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN5060 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UPA1807GR-9JG-E1-ARochester Electronics |
MOSFET N-CH 30V 12A 8TSSOP |
|
RD3G500GNTLROHM Semiconductor |
MOSFET N-CH 40V 50A TO252 |
|
SQ4153EY-T1_BE3Vishay / Siliconix |
MOSFET P-CHANNEL 12V 25A 8SOIC |
|
YJL2312A-F2-0100HF |
N-CH MOSFET 20V 6.8A SOT-23-3L |
|
NTMFS5C612NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 5DFN |
|
IRFSL7730PBFRochester Electronics |
MOSFET N-CH 75V 195A TO262 |
|
CSD17575Q3TTexas Instruments |
MOSFET N-CH 30V 60A 8VSON |
|
HUF75345S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK |
|
DMN4010LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 11.5A PWRDI3333 |
|
STB25N80K5STMicroelectronics |
MOSFET N-CH 800V 19.5A D2PAK |
|
TBB1002BMTL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
IPD60R600C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO252-3 |
|
R5007ANJTLROHM Semiconductor |
MOSFET N-CH 500V 7A LPTS |