English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 30mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 5.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 180 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 11300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1040W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFH100N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 100A TO247 |
|
SI4425FDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12.7/18.3A 8SOIC |
|
IRFML8244TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 5.8A SOT23 |
|
PMZB950UPEYLNexperia |
MOSFET P-CH 20V 500MA DFN1006B-3 |
|
AO3407AAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 4.3A SOT23-3L |
|
SIHF080N60E-GE3Vishay / Siliconix |
E SERIES POWER MOSFET TO-220 FUL |
|
NTLUS3A90PZTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.6A 6UDFN |
|
IRLR3410PBFRochester Electronics |
HEXFET POWER MOSFET |
|
STD25NF10LASTMicroelectronics |
MOSFET N-CH 100V 25A DPAK |
|
IPL65R210CFDAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16.6A 4VSON |
|
IPB65R280C6ATMA1Rochester Electronics |
MOSFET N-CH 650V 13.8A D2PAK |
|
DIT195N08Diotec Semiconductor |
MOSFET N-CH 85V 195A TO220AB |
|
TK11A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 11A TO220SIS |
