English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.1Ohm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 27 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 780 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 90W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPHR9003NL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 60A 8SOP |
|
STV300NH02LSTMicroelectronics |
MOSFET N-CH 24V 200A 10POWERSO |
|
ON5257215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPP060N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/45A TO220-3 |
|
TSM80N1R2CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 5.5A TO251 |
|
NTD6N40-001-MORochester Electronics |
NFET DPAK 400V 1.1R |
|
AUIRF4104SRochester Electronics |
MOSFET N-CH 40V 75A D2PAK |
|
PSMN1R2-30YLDXNexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
NSTR4501NT1GRochester Electronics |
MOSFET N-CH 20V 3.2A SOT23-3 |
|
IXTT02N450HVWickmann / Littelfuse |
MOSFET N-CH 4500V 200MA TO268 |
|
IPP80R360P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 13A TO220-3 |
|
IXTH1N300P3HVWickmann / Littelfuse |
MOSFET N-CH 3000V 1A TO247HV |
|
SUD23N06-31-T4-GE3Vishay / Siliconix |
MOSFET N-CH 60V 21.4A TO252 |
