类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 5.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 22mOhm @ 5.2A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 13 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 480 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 510mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-236AB (SOT23) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDD1600N10ALZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6.8A TO252 |
|
RS1E280GNTBROHM Semiconductor |
MOSFET N-CH 30V 28A 8HSOP |
|
BSZ065N03LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 12A/40A TSDSON |
|
PMV30UN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FQP17N08Rochester Electronics |
MOSFET N-CH 80V 16.5A TO220-3 |
|
RM60N75LDRectron USA |
MOSFET N-CHANNEL 75V 60A TO252-2 |
|
DMTH6005LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI5060 |
|
IXTP3N110Wickmann / Littelfuse |
MOSFET N-CH 1100V 3A TO220AB |
|
SPI16N50C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSO301SPHXUMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 12.6A 8DSO |
|
SI7114ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK 1212-8 |
|
STW12NK95ZSTMicroelectronics |
MOSFET N-CH 950V 10A TO247-3 |
|
BSZ130N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 10A/35A 8TSDSON |