类型 | 描述 |
---|---|
系列: | TrenchMOS™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 6.6mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 20.9 nC @ 5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 2.6 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 96W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I2PAK |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CDM7-650 TR13 PBFREECentral Semiconductor |
MOSFET N-CH 650V 7A DPAK |
|
DMP3130LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.5A SOT23 |
|
FDMS8050ET30Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 55A/423A POWER56 |
|
CSD19535KCSTexas Instruments |
MOSFET N-CH 100V 150A TO220-3 |
|
SQD40020E_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO252AA |
|
CSD13385F5TTexas Instruments |
MOSFET N-CH 12V 4.3A 3PICOSTAR |
|
H5N2007FN-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
STD18N65M5STMicroelectronics |
MOSFET N-CH 650V 15A DPAK |
|
PMZ200UNE315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IXTY32P05TWickmann / Littelfuse |
MOSFET P-CH 50V 32A TO252 |
|
NTMFS4121NT1GRochester Electronics |
MOSFET N-CH 30V 11A 5DFN |
|
RRH040P03TB1ROHM Semiconductor |
MOSFET P-CH 30V 4A 8SOP |
|
NTMFS4837NT1GRochester Electronics |
MOSFET N-CH 30V 10A/74A 5DFN |