CAP CER 6800PF 250V C0G/NP0 RAD
MOSFET N-CH 30V 62A TO220AB
RECTIFIER DIODE
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 62A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 8.7mOhm @ 31A, 10V |
vgs(th) (最大值) @ id: | 2.35V @ 25µA |
栅极电荷 (qg) (max) @ vgs: | 13 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1077 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 65W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMN55ENEAXNexperia |
MOSFET N-CH 60V 3.6A 6TSOP |
|
TSM60NB099CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 38A ITO220S |
|
SSM3J117TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CHANNEL 30V 2A UFM |
|
FDU8874Rochester Electronics |
MOSFET N-CH 30V 18A/116A IPAK |
|
FQPF10N20CRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 9 |
|
BSC034N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TDSON |
|
FQPF9N25CTRochester Electronics |
MOSFET N-CH 250V 8.8A TO220F |
|
SSM5N15FE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA ESV |
|
IRLML2402TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 1.2A SOT23 |
|
NTLJF3118NTBGRochester Electronics |
MOSFET N-CH 20V 2.6A 6WDFN |
|
CSD17313Q2TTexas Instruments |
MOSFET N-CH 30V 5A 6WSON |
|
HUF75337P3Rochester Electronics |
MOSFET N-CH 55V 75A TO220-3 |
|
IRFS11N50ATRRPVishay / Siliconix |
MOSFET N-CH 500V 11A D2PAK |