English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.7Ohm @ 800mA, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 350 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 28W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL520PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 9.2A TO220AB |
|
IPD30N03S2L07ATMA1Rochester Electronics |
MOSFET N-CH 30V 30A TO252-3 |
|
RW1C026ZPT2CRROHM Semiconductor |
MOSFET P-CH 20V 2.5A 6WEMT |
|
NVMFS5C673NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |
|
IXTA200N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 200A TO263 |
|
BSZ130N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 9A/35A 8TSDSON |
|
IXTX22N100LWickmann / Littelfuse |
MOSFET N-CH 1000V 22A PLUS247-3 |
|
NVMFS5844NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11.2A 5DFN |
|
DMN61D8LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 470MA SOT23 |
|
2SK1288-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TK065U65Z,RQToshiba Electronic Devices and Storage Corporation |
DTMOS VI TOLL PD=270W F=1MHZ |
|
STWA48N60M2STMicroelectronics |
MOSFET N-CH 600V 42A TO247 |
|
BUZ30AHXKSA1Rochester Electronics |
PFET, 21A I(D), 200V, 0.13OHM, 1 |
