RES 64K OHM 1/2W 1% AXIAL
MOSFET N-CH 40V PWRDI3333
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 24A (Ta), 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 3mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 40.1 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2798 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 2.62W (Ta), 65.2W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI3333-8 |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AON6578Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 28A/70A 8DFN |
|
TK3A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 3A TO220SIS |
|
SIHG065N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 40A TO247AC |
|
MTD2N40ET4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL60NH3LLSTMicroelectronics |
MOSFET N-CH 30V 30A POWERFLAT |
|
SI4435FDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12.6A 8SOIC |
|
FDWS86368-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 80A POWER56 |
|
NDD60N900U1T4GRochester Electronics |
MOSFET N-CH 600V 5.7A DPAK |
|
SFT1341-C-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 10A DPAK/TP-FA |
|
SQM50034EL_GE3Vishay / Siliconix |
MOSFET N-CH 60V 100A TO263 |
|
HUF75631S3SRochester Electronics |
N CHANNEL ULTRAFET 100V, 33A, 4 |
|
APT8020B2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 38A T-MAX |
|
SI4497DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 36A 8SO |