English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 3.1mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 3.8V @ 108µA |
| 栅极电荷 (qg) (max) @ vgs: | 87 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6240 pF @ 40 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 167W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFZ44VZPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 57A TO220AB |
|
BSP297H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 660MA SOT223-4 |
|
NVMFS6H818NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 20A/123A 5DFN |
|
RFD16N05Rochester Electronics |
MOSFET N-CH 50V 16A IPAK |
|
IPA60R170CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 8A TO220 |
|
NTE2381NTE Electronics, Inc. |
MOSFET P-CHANNEL 500V 2.7A TO220 |
|
IXFQ50N60XWickmann / Littelfuse |
MOSFET N-CH 600V 50A TO3P |
|
RM052N100DFRectron USA |
MOSFET N-CHANNEL 100V 70A 8DFN |
|
BUK7M3R3-40HXNexperia |
MOSFET N-CH 40V 80A LFPAK33 |
|
TPH4R008NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 60A 8SOP |
|
RQ5H025TNTLROHM Semiconductor |
MOSFET N-CH 45V 2.5A TSMT3 |
|
SQD19P06-60L_T4GE3Vishay / Siliconix |
MOSFET P-CH 60V 20A TO252AA |
|
IXFX27N80QWickmann / Littelfuse |
MOSFET N-CH 800V 27A PLUS247-3 |
