English
简体中文
P-CHANNEL POWER MOSFET
MOUNT BMM 3/4 58A RSMAM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTH130N20TWickmann / Littelfuse |
MOSFET N-CH 200V 130A TO247 |
|
IXTA4N150HV-TRLWickmann / Littelfuse |
MOSFET N-CH 1500V 4A TO263HV |
|
DMTH6004LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A PWRDI5060-8 |
|
IRFR4105ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 30A DPAK |
|
IPD60R380C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO252-3 |
|
FQD2N80TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 1.8A DPAK |
|
STP42N65M5STMicroelectronics |
MOSFET N-CH 650V 33A TO220-3 |
|
FQPF8N80CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 8A TO220F |
|
RJK0456DPB-00#J5Renesas Electronics America |
MOSFET N-CH 40V 50A LFPAK |
|
IPD60R280P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 12A TO252-3 |
|
IXFN44N80Q3Wickmann / Littelfuse |
MOSFET N-CH 800V 37A SOT227B |
|
IRLR2705TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 28A DPAK |
|
FDPF10N60ZUTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9A TO220F |