English
简体中文
CAP CER RAD 27NF 25V C0G 10%
MOSFET N-CH 650V 4A TO220
WASHER FLAT M12 PLASTIC
FERRITE BEAD 150 OHM 0805 1LN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.35Ohm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9.8 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 226 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSC180SMA120SRoving Networks / Microchip Technology |
MOSFET SIC 1200 V 180 MOHM TO-26 |
|
NTLUS4195PZTAGRochester Electronics |
MOSFET P-CH 30V 2A 6UDFN |
|
HUF76131SK8TRochester Electronics |
N-CHANNEL POWER MOSFET |
|
CSD17578Q3ATTexas Instruments |
MOSFET N-CH 30V 20A 8VSON |
|
2N7002NXAKRNexperia |
MOSFET N-CH 60V 190MA TO236AB |
|
DMP21D5UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 700MA 3DFN |
|
AOB2500LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 11.5/152A TO263 |
|
SI7115DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 150V 8.9A PPAK1212-8 |
|
FQB22P10TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 22A D2PAK |
|
FDN359BNSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 2.7A SUPERSOT3 |
|
SI4114DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 20A 8SO |
|
IPN70R750P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6.5A SOT223 |
|
IRFH5250TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 45A/100A 8PQFN |