English
简体中文
RES ARRAY 4 RES 1K OHM 8SOIC
CRYSTAL 26.0000MHZ 18PF SMD
MOSFET N-CH 20V 1A X2-DFN1006-3
IC INTFACE SPECIALIZED 484FCBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 400mOhm @ 600mA, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 2 nC @ 10 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 82 pF @ 16 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | X2-DFN1006-3 |
| 包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK560A65Y,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 7A TO220SIS |
|
IRF624PBFVishay / Siliconix |
MOSFET N-CH 250V 4.4A TO220AB |
|
NTD65N03RGRochester Electronics |
MOSFET N-CH 25V 9.5A/32A DPAK |
|
NVMFS4841NT1GRochester Electronics |
MOSFET N-CH 30V 16A 5DFN |
|
STD10P6F6STMicroelectronics |
MOSFET P CH 60V 10A DPAK |
|
SUP70090E-GE3Vishay / Siliconix |
MOSFET N-CH 100V 50A TO220AB |
|
TPS1101PWRRochester Electronics |
MOSFET P-CH 15V 2.18A 16TSSOP |
|
STL11N3LLH6STMicroelectronics |
MOSFET N-CH 30V 11A POWERFLAT |
|
BUK9608-55B,118Nexperia |
MOSFET N-CH 55V 75A D2PAK |
|
SPS01N60C3Rochester Electronics |
MOSFET N-CH 650V 800MA TO251-3 |
|
STB150N3LH6STMicroelectronics |
MOSFET N CH 30V 80A D2PAK |
|
IRF2807SPBFRochester Electronics |
MOSFET N-CH 75V 82A D2PAK |
|
AOD380A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO252 |