English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UltraFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 10mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 235 nC @ 20 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3.75 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 270W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT41F100JRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 42A ISOTOP |
|
STD5N60M2STMicroelectronics |
MOSFET N-CH 600V 3.5A DPAK |
|
NVTFS5116PLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 6A 8WDFN |
|
SIS128LDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 10.2A/33.7A PPAK |
|
BSZ22DN20NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 7A 8TSDSON |
|
SIR472ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 18A PPAK SO-8 |
|
IPI60R099CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 31A TO262-3 |
|
AOD4126Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 7.5A/43A TO252 |
|
CSD16415Q5Texas Instruments |
MOSFET N-CH 25V 100A 8VSON |
|
SI4890DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 11A 8-SOIC |
|
NP70N04MUG-S18-AYRochester Electronics |
MOSFET N-CH 40V 70A TO220 |
|
AOV15S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 520MA/12A 4DFN |
|
APT6021BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 29A TO247 |
