类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 88A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 3.5mOhm @ 88A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 99 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 8030 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 46.3W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220F-3 |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN010-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 39A LFPAK56 |
|
IPI80N06S4L07AKSA2Rochester Electronics |
MOSFET N-CH 60V 80A TO262-3-1 |
|
TK100E10N1,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 100A TO220 |
|
FQT3P20TFSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 670MA SOT223-4 |
|
SI7772DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35.6A PPAK SO-8 |
|
AUIRF3808STRLRochester Electronics |
MOSFET N-CH 75V 140A D2PAK |
|
IXFH110N10PWickmann / Littelfuse |
MOSFET N-CH 100V 110A TO247AD |
|
SIRA36DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
FDD8647LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 14A/42A DPAK |
|
2SK4098LSRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPN50R1K4CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 4.8A SOT223 |
|
IRFR13N20DPBFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
IPP040N06N3GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 9 |