类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 25 V |
电流 - 连续漏极 (id) @ 25°c: | 8.5A (Ta), 32A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 10.5mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 14 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1330 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 1.25W (Ta), 58W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SPD02N80C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 2A TO252-3 |
|
TSM4N60ECH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 4A TO251 |
|
BUK763R9-60E,118Nexperia |
MOSFET N-CH 60V 100A D2PAK |
|
BSD816SNH6327XTSA1Rochester Electronics |
MOSFET N-CH 20V 1.4A SOT363-6 |
|
AUIRFR1010ZTRLRochester Electronics |
AUTOMOTIVE N CHANNEL |
|
NTD5N50Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI2316DS-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 2.9A SOT23-3 |
|
STW13NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 13A TO247-3 |
|
AO3404AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 5.8A SOT23-3L |
|
IPD060N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-3 |
|
DMN100-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 1.1A SC59-3 |
|
SSM3K56FS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 800MA SSM |
|
DMNH10H028SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 40A PWRDI5060-8 |