RES 1.82K OHM 1/20W .1% AXIAL
CAP CER 0505
6.2A, 700V, 1.5OHM, N-CHANNEL,
WATER RESISTANT UTILITY
类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 700 V |
电流 - 连续漏极 (id) @ 25°c: | 6.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.5Ohm @ 3.1A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1.4 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 142W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI4413ADY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 10.5A 8SO |
|
DMP2021UFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 11.1A 6UDFN |
|
BUK961R7-40E,118Rochester Electronics |
MOSFET N-CH 40V 120A D2PAK |
|
IPB35N10S3L26ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 35A D2PAK |
|
SIHFPS37N50A-GE3Vishay / Siliconix |
POWER MOSFET SUPER-247, 130 M @ |
|
SPI20N60CFDXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMFS5A140PLZWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 20A/140A 5DFN |
|
2N7002 TR13 PBFREECentral Semiconductor |
MOSFET N-CH 60V 115MA SOT23 |
|
PMV30ENEARNexperia |
MOSFET N-CH 40V 4.8A TO236AB |
|
PMN30XPEXNexperia |
MOSFET P-CH 20V 5.3A 6TSOP |
|
NTS4001NT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
AUIRFS8409TRLRochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
FQD18N20V2TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 15A DPAK |