English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 33mOhm @ 5.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 1926 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.6W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SuperSOT™-6 |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI3442BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 3A 6TSOP |
|
IRF8736TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 18A 8SO |
|
BSP322PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 1A SOT223-4 |
|
SIR670DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
TPCA8028-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 50A 8SOP |
|
FQD9N25TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 7.4A DPAK |
|
SSM3K16CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 100MA CST3 |
|
IXTA12N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 12A TO263AA |
|
PMPB15XPHNexperia |
MOSFET P-CH 12V 8.2A DFN2020MD-6 |
|
BSZ042N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/40A TSDSON |
|
STFW20N65M5STMicroelectronics |
MOSFET N-CH 650V 18A ISOWATT |
|
IPP070N08N3GXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
R6002ENDTLROHM Semiconductor |
MOSFET N-CH 600V 1.7A CPT3 |
