English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Ta), 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2085 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.3W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI5060-8 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHP38N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 43A TO220AB |
|
TK12A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 12A TO220SIS |
|
DMN60H4D5SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 2.5A TO252 |
|
FDMS8018Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 30A/120A 8PQFN |
|
SI7431DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 200V 2.2A PPAK SO-8 |
|
RSJ10HN06TLROHM Semiconductor |
MOSFET N-CH 60V 100A LPTS |
|
TSM7P06CP ROGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 60V 7A TO252 |
|
IXTH11P50Wickmann / Littelfuse |
MOSFET P-CH 500V 11A TO247 |
|
FQU17P06TUSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A IPAK |
|
C2M1000170JWolfspeed - a Cree company |
SICFET N-CH 1700V 5.3A D2PAK |
|
IPI60R299CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFX98N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 98A PLUS247-3 |
|
IXFR30N60PWickmann / Littelfuse |
MOSFET N-CH 600V 15A ISOPLUS247 |
