English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GigaMOS™, HiPerFET™, TrenchT2™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 130A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9.1mOhm @ 65A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6600 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 360W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK12Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 11.5A IPAK |
|
IPD25N06S240ATMA1Rochester Electronics |
MOSFET N-CH 55V 29A TO252-3 |
|
IPA041N04NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A TO220-FP |
|
DMP1022UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 9.5A 6UDFN |
|
DMP22D6UT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 430MA SOT523 |
|
AOWF10N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 10A TO262F |
|
SSR4N60BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQA8N100CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1000V 8A TO3PN |
|
SQM70060EL_GE3Vishay / Siliconix |
MOSFET N-CH 100V 75A D2PAK |
|
FDC642PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4A SUPERSOT6 |
|
RFD16N05SMRochester Electronics |
MOSFET N-CH 50V 16A TO252AA |
|
SIHD6N62ET1-GE3Vishay / Siliconix |
MOSFET N-CH 620V 6A TO252AA |
|
RJK03M9DNS-00#J5Rochester Electronics |
MOSFET N-CH 30V 14A 8HWSON |
