RES 910 OHM 1% 1/16W 0402
CAP CER 0603 1.3NF 16V ULTRA STA
N-CHANNEL POWER MOSFET
SWIR EMITTER 1460NM 1206 SMD DOM
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIRA26DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8 |
|
IRF9540PBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 19A TO220AB |
|
CSD18537NQ5ATexas Instruments |
MOSFET N-CH 60V 50A 8VSON |
|
UPA2810T1L-E2-AYRochester Electronics |
MOSFET P-CH 30V 13A 8DFN |
|
FDS4470Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IXFK220N15PWickmann / Littelfuse |
MOSFET N-CH 150V 220A TO264AA |
|
FDD5N50UTM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 3A DPAK |
|
IRFZ20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 50V 15A TO220AB |
|
NTD4404N1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQP12P10Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 11.5A TO220-3 |
|
IPLK80R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET 800V TDSON-8 |
|
STP110N8F7STMicroelectronics |
MOSFET N-CH 80V 80A TO220 |
|
FDC2512Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 1.4A SUPERSOT6 |