English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 860mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1160 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 178W (Tc) |
| 工作温度: | -50°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-251A |
| 包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7635-100A,118Nexperia |
MOSFET N-CH 100V 41A D2PAK |
|
IXFP34N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 34A TO220AB |
|
SIS407ADN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 18A PPAK1212-8 |
|
IRF3710ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 59A D2PAK |
|
AOI4184Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 12A/50A TO251A |
|
STH145N8F7-2AGSTMicroelectronics |
MOSFET N-CH 80V 90A H2PAK-2 |
|
IRFS52N15DTRRPIR (Infineon Technologies) |
MOSFET N-CH 150V 51A D2PAK |
|
FCPF290N80Rochester Electronics |
MOSFET N-CH 800V 17A TO220F |
|
APT24M80BRoving Networks / Microchip Technology |
MOSFET N-CH 800V 25A TO247 |
|
RCJ300N20TLROHM Semiconductor |
MOSFET N-CH 200V 30A LPTS |
|
SPB08P06PGATMA1Rochester Electronics |
12V-250V P-CHANNEL POWER MOSFET |
|
FDD8896-F085Rochester Electronics |
MOSFET N-CH 30V 17A/94A TO252AA |
|
DMP1045U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 4A SOT23 |
