







MOSFET N-CH 20V 6.5A 6UDFN
DIODE GEN PURP 75V 300MA 3DFN
INSULATION DISPLACEMENT TERMINAL
RSP25-11003Z6ZT-SKKV9HPE2SXX.X.X
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.5A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 25mOhm @ 4A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12.3 nC @ 10 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 486 pF @ 10 V |
| 场效应管特征: | - |
| 功耗(最大值): | 700mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | U-DFN2020-6 (Type F) |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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