类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Ta), 93A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 4.7mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 33.7 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2164 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.7W (Ta), 79W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SCTWA90N65G2V-4STMicroelectronics |
TRANS SJT N-CH 650V 119A HIP247 |
|
DMN3033LSNQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6A SC59 |
|
IRF820ASPBFVishay / Siliconix |
MOSFET N-CH 500V 2.5A D2PAK |
|
FQAF33N10Rochester Electronics |
MOSFET N-CH 100V 25.8A TO3PF |
|
TJ50S06M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 50A DPAK |
|
IRFS540ARochester Electronics |
MOSFET N-CH 100V 17A TO220F |
|
FDD8N50NZTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 6.5A DPAK |
|
FDBL86361-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 300A 8HPSOF |
|
SIHF520STRL-GE3Vishay / Siliconix |
MOSFET N-CH 100V 9.2A D2PAK |
|
FDMS7694Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13.2A/20A 8PQFN |
|
IRFH8324TR2PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 23A/90A PQFN |
|
STP28N65M2STMicroelectronics |
MOSFET N-CH 650V 20A TO220 |
|
SSM3K56CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 800MA CST3 |