类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SFT1423-ERochester Electronics |
N-CHANNEL MOSFET |
![]() |
IXTN46N50LWickmann / Littelfuse |
MOSFET N-CH 500V 46A SOT-227B |
![]() |
SPI15N65C3XKSA1Rochester Electronics |
MOSFET N-CH 650V 15A TO262-3 |
![]() |
IRF8707TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 11A 8SO |
![]() |
IRLS4030TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 180A D2PAK |
![]() |
IPD50N06S4L08ATMA1Rochester Electronics |
MOSFET N-CH 60V 50A TO252-3 |
![]() |
IRF710PBF-BE3Vishay / Siliconix |
MOSFET N-CH 400V 2A TO220AB |
![]() |
DMS3014SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 9.5A PWRDI3333-8 |
![]() |
FDMA910PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 9.4A 6MICROFET |
![]() |
IRLIZ44GPBFVishay / Siliconix |
MOSFET N-CH 60V 30A TO220-3 |
![]() |
RJK0352DSP-00#J0Rochester Electronics |
MOSFET N-CH 30V 18A 8SOP |
![]() |
FDB8441-F085Rochester Electronics |
MOSFET N-CH 40V 28A/80A TO263AB |
![]() |
FDS8447Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 12.8A 8SOIC |