MEMS OSC XO 54.0000MHZ LVCMOS
MOSFET P-CH 20V 6A 6TSOP
SENSOR PRESSURE 1" H2O 18 BIT RE
CHARGED PLATE ANALYZER, 6''X6'',
类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 38mOhm @ 5.2A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 45 nC @ 8 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 1300 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 3.3W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 6-TSOP |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
BUK7509-75A,127Rochester Electronics |
PFET, 75A I(D), 75V, 0.009OHM, 1 |
![]() |
NTHD4P02FT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.2A CHIPFET |
![]() |
STH260N6F6-6STMicroelectronics |
MOSFET N-CH 60V 180A H2PAK-6 |
![]() |
DMG3415UFY4Q-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 16V 2.5A X2-DFN2015 |
![]() |
STP13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A TO220 |
![]() |
UPA2720GR-E1-ARochester Electronics |
MOSFET N-CH 30V 14A 8PSOP |
![]() |
SUM110P04-05-E3Vishay / Siliconix |
MOSFET P-CH 40V 110A TO263 |
![]() |
FDU3580Rochester Electronics |
MOSFET N-CH 80V 7.7A IPAK |
![]() |
STH310N10F7-6STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-6 |
![]() |
SIHD2N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.9A DPAK |
![]() |
AOK160A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 24A TO247 |
![]() |
STL190N4F7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
![]() |
IRF7821PBFRochester Electronics |
HEXFET POWER MOSFET |