English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ C7 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 65mOhm @ 17.1A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 850µA |
| 栅极电荷 (qg) (max) @ vgs: | 64 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3020 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 171W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI60R280C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 13.8A TO262-3 |
|
2N6761Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDT458PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.4A SOT223-4 |
|
SISHA10DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 25A/30A PPAK |
|
FCH125N60ERochester Electronics |
MOSFET N-CH 600V 29A TO247-3 |
|
IRFR9120TRLPBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
|
TK62N60W,S1VFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 61.8A TO247 |
|
BSZ16DN25NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 10.9A 8TSDSON |
|
STL12N60M6STMicroelectronics |
MOSFET N-CH 600V 6.4A PWRFLAT HV |
|
SIHFR430ATR-GE3Vishay / Siliconix |
MOSFET N-CH 500V 5A DPAK |
|
IPD60R750E6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTH20P50PWickmann / Littelfuse |
MOSFET P-CH 500V 20A TO247 |
|
C3M0120090J-TRWolfspeed - a Cree company |
SICFET N-CH 900V 22A D2PAK-7 |
