类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 140A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 4.5mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 50 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4010 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 140W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-Pak |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STP240N10F7STMicroelectronics |
MOSFET N-CH 100V 180A TO220 |
|
STP40N60M2STMicroelectronics |
MOSFET N-CH 600V 34A TO220 |
|
NVMFS6B03NWFT1GRochester Electronics |
MOSFET N-CH 100V 5DFN |
|
NP82N06NLG-S18-AYRochester Electronics |
MOSFET N-CH 60V 82A TO262 |
|
PMV56XN,215Rochester Electronics |
MOSFET N-CH 20V 3.76A TO236AB |
|
FCPF400N80ZL1Rochester Electronics |
MOSFET N-CH 800V 11A TO220F |
|
SPP03N60C3XKSA1Rochester Electronics |
MOSFET N-CH 600V 3.2A TO220-3 |
|
IRF223Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD6796ARochester Electronics |
MOSFET N-CH 25V 20A/40A TO252 |
|
STF12N50DM2STMicroelectronics |
MOSFET N-CH 500V 11A TO220FP |
|
STD25NF10T4STMicroelectronics |
MOSFET N-CH 100V 25A DPAK |
|
NTTFS4C08NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.3A 8WDFN |
|
APT34F60SRoving Networks / Microchip Technology |
MOSFET N-CH 600V 36A D3PAK |